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| Min Operating Temperature | -55 °C |
|---|---|
| Mount | Surface Mount |
| Fall Time | 9 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Resistance | 800 mΩ |
| Number of Pins | 4 |
| Number of Elements | 1 |
| Recovery Time | 46 ns |
| Input Capacitance | 160 pF |
| Lead Free | Lead Free |
| Rds On Max | 800 mΩ |
| Max Power Dissipation | 1.8 W |
| Drain to Source Breakdown Voltage | 60 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Current Rating | -1.17 A |
| Turn-On Delay Time | 24 ns |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 1.8 W |
| Continuous Drain Current (ID) | 1.17 A |
| Rise Time | 9 ns |
| Turn-Off Delay Time | 32 ns |
| Voltage Rating (DC) | -60 V |
| Case/Package | SOT-223-4 |
Infineon
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN
