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| RdsOn(Max)@Id | 2V @ 160µA |
|---|---|
| Vgs(th)(Max)@Id | 160 pF @ 25 V |
| Vgs | ±20V |
| FETFeature | -55°C ~ 150°C (TJ) |
| DraintoSourceVoltage(Vdss) | 60 V |
| OperatingTemperature | PG-SOT223-4 |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-261-4, TO-261AA |
| InputCapacitance(Ciss)(Max)@Vds | 1.8W (Ta) |
| Series | SIPMOS® |
| Qualification | |
| SupplierDevicePackage | 7.8 nC @ 10 V |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 1.17A (Ta) |
| Vgs(Max) | - |
| MinRdsOn) | 800mOhm @ 1.17A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | Surface Mount |
Infineon
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN
INFINEON
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4
