Operating Temperature | -65u00b0C ~ 150u00b0C (TJ) |
---|---|
FET Feature | - |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 25 V |
Current - Continuous Drain (Id) @ 25u00b0C | 170mA (Ta) |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 17Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id | 2.55V @ 1mA |
Supplier Device Package | TO-92-3 |
Drain to Source Voltage (Vdss) | 300 V |
Series | - |
Power Dissipation (Max) | 1W (Ta) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Technology | MOSFET (Metal Oxide) |
Mfr | NXP USA Inc. |
Part Status | Obsolete |
Vgs (Max) | u00b120V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | BSP3 |
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