RdsOn(Max)@Id | 2.55V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | - |
FETFeature | 1W (Ta) |
DraintoSourceVoltage(Vdss) | 300 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-92-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 170mA (Ta) |
Vgs(Max) | 90 pF @ 25 V |
MinRdsOn) | 17Ohm @ 170mA, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -65°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
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