RdsOn(Max)@Id | 4V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | - |
FETFeature | 1.8W (Ta) |
DraintoSourceVoltage(Vdss) | 800 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | PG-SOT223-4-21 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | SIPMOS® |
Qualification | |
SupplierDevicePackage | TO-261-4, TO-261AA |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 190mA (Ta) |
Vgs(Max) | 230 pF @ 25 V |
MinRdsOn) | 20Ohm @ 190mA, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN