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| Operating Temperature | -65u00b0C ~ 150u00b0C (TJ) |
|---|---|
| FET Feature | - |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25u00b0C | 170mA (Ta) |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 17Ohm @ 170mA, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 300 V |
| Series | - |
| Power Dissipation (Max) | 1W (Ta) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Technology | MOSFET (Metal Oxide) |
| Mfr | NXP USA Inc. |
| Part Status | Obsolete |
| Vgs (Max) | u00b120V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | BSP3 |
Infineon
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN
