Continuous Drain Current (Id) | 190mA |
---|---|
Type | Nu6c9fu9053 |
Drain Source Voltage (Vdss) | 800V |
Power Dissipation (Pd) | 1.8W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@1mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 20u03a9@10V,190mA |
Infineon
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN