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| RdsOn(Max)@Id | 4V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 17.3 nC @ 10 V |
| FETFeature | 55W (Tc) |
| DraintoSourceVoltage(Vdss) | 60 V |
| OperatingTemperature | Automotive |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | LFPAK33 |
| GateCharge(Qg)(Max)@Vgs | SOT-1210, 8-LFPAK33 (5-Lead) |
| Grade | |
| MountingType | AEC-Q101 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | TrenchMOS™ |
| Qualification | |
| SupplierDevicePackage | Surface Mount |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 35.8A (Tc) |
| Vgs(Max) | 1055 pF @ 25 V |
| MinRdsOn) | 19mOhm @ 10A, 10V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
NXP USA Inc.
TRANSISTOR 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
