RdsOn(Max)@Id | 4V @ 1mA |
---|---|
Vgs(th)(Max)@Id | 1310 pF @ 25 V |
Vgs | ±20V |
FETFeature | -55°C ~ 175°C (TJ) |
DraintoSourceVoltage(Vdss) | 55 V |
OperatingTemperature | DPAK |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-252-3, DPak (2 Leads + Tab), SC-63 |
InputCapacitance(Ciss)(Max)@Vds | 94W (Ta) |
Series | - |
Qualification | |
SupplierDevicePackage | - |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 43A (Ta) |
Vgs(Max) | - |
MinRdsOn) | 25mOhm @ 25A, 10V |
Package | Bulk |
PowerDissipation(Max) | Surface Mount |
NXP USA Inc.
TRANSISTOR 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power