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| RdsOn(Max)@Id | - |
|---|---|
| Vgs(th)(Max)@Id | -55°C ~ 175°C (TJ) |
| Vgs | 158W (Tc) |
| FETFeature | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| DraintoSourceVoltage(Vdss) | 75 V |
| OperatingTemperature | 48 nC @ 10 V |
| DriveVoltage(MaxRdsOn | 26mOhm @ 25A, 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | DPAK |
| Series | TrenchMOS™ |
| Qualification | |
| SupplierDevicePackage | 2385 pF @ 25 V |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| Vgs(Max) | Surface Mount |
| MinRdsOn) | 4V @ 1mA |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | 10V |
NXP USA Inc.
TRANSISTOR 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
