RdsOn(Max)@Id | 4V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 5.5 nC @ 10 V |
FETFeature | 36W (Tc) |
DraintoSourceVoltage(Vdss) | 55 V |
OperatingTemperature | Automotive |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | DPAK |
GateCharge(Qg)(Max)@Vgs | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Grade | |
MountingType | AEC-Q101 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchMOS™ |
Qualification | |
SupplierDevicePackage | Surface Mount |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
Vgs(Max) | 322 pF @ 25 V |
MinRdsOn) | 150mOhm @ 5A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT) |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
NXP USA Inc.
TRANSISTOR 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power