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| Operating Temperature | -55u00b0C ~ 175u00b0C (TJ) |
|---|---|
| FET Feature | Temperature Sensing Diode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25u00b0C | 75A (Tc) |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 40 V |
| Series | Automotive, AEC-Q101, TrenchMOSu2122 |
| Power Dissipation (Max) | 272W (Tc) |
| Package / Case | TO-263-5, Du00b2Pak (4 Leads + Tab), TO-263BB |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Nexperia USA Inc. |
| Part Status | Obsolete |
| Vgs (Max) | u00b120V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
NXP USA Inc.
TRANSISTOR 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
