RdsOn(Max)@Id | 4V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 127 nC @ 10 V |
FETFeature | 272W (Tc) |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
MountingType | D2PAK |
InputCapacitance(Ciss)(Max)@Vds | Current Sensing |
Series | TrenchMOS™ |
Qualification | |
SupplierDevicePackage | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 75A (Tc) |
Vgs(Max) | 5000 pF @ 25 V |
MinRdsOn) | 5mOhm @ 50A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
NXP USA Inc.
TRANSISTOR 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power