RdsOn(Max)@Id | 53mOhm @ 3.4A, 10V |
---|---|
Vgs(th)(Max)@Id | 16nC @ 10V |
Vgs | 1V @ 250µA (Min) |
Configuration | 2 N-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 30V |
OperatingTemperature | Surface Mount |
ProductStatus | Active |
Package/Case | 8-TSSOP |
GateCharge(Qg)(Max)@Vgs | - |
Grade | - |
MountingType | 8-TSSOP (0.173, 4.40mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 830mW |
Series | TrenchFET® |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 3.1A |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
Power-Max | -55°C ~ 150°C (TJ) |
Vishay / Siliconix
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP-8
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Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
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Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8