RdsOn(Max)@Id | 80mOhm @ 2.5A, 4.5V |
---|---|
Vgs(th)(Max)@Id | 10nC @ 4.5V |
Vgs | 800mV @ 250µA |
Configuration | 2 P-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 12V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-TSSOP |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 8-TSSOP (0.173, 4.40mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 800mW |
Series | TrenchFET® |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 2.3A |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |
Vishay / Siliconix
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP-8
VISHAY
Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
VISHAY
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8