Min Operating Temperature | -55 °C |
---|---|
Gate to Source Voltage (Vgs) | 12 V |
Fall Time | 30 ns |
Turn-On Delay Time | 27 ns |
RoHS | Non-Compliant |
Weight | 157.991892 mg |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | -20 V |
Drain to Source Resistance | 50 mΩ |
Continuous Drain Current (ID) | 3.5 A |
Element Configuration | Single |
Rise Time | 30 ns |
Number of Channels | 1 |
Length | 3 mm |
Turn-Off Delay Time | 57 ns |
Height | 1 mm |
Width | 4.4 mm |
Case/Package | TSSOP |
Max Power Dissipation | 1.2 W |
Vishay / Siliconix
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP-8
VISHAY
Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
VISHAY
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8