RdsOn(Max)@Id | 170mOhm @ 1.9A, 10V |
---|---|
Vgs(th)(Max)@Id | 10nC @ 10V |
Vgs | 3V @ 250µA |
Configuration | 2 P-Channel (Dual) |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 20V |
OperatingTemperature | Surface Mount |
ProductStatus | Active |
Package/Case | 8-TSSOP |
GateCharge(Qg)(Max)@Vgs | 218pF @ 10V |
Grade | - |
MountingType | 8-TSSOP (0.173, 4.40mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 600mW (Ta) |
Series | PowerTrench® |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.9A (Ta) |
Package | Bulk |
Power-Max | -55°C ~ 150°C (TJ) |
Vishay / Siliconix
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Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8