RdsOn(Max)@Id | 3.5V @ 200µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 18.7 nC @ 10 V |
FETFeature | 57W (Tc) |
DraintoSourceVoltage(Vdss) | 500 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 13V |
ProductStatus | Discontinued at Digi-Key |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | PG-TO252-3-11 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolMOS™ CE |
Qualification | |
SupplierDevicePackage | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 7.6A (Tc) |
Vgs(Max) | 433 pF @ 100 V |
MinRdsOn) | 500mOhm @ 2.3A, 13V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3