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| RdsOn(Max)@Id | 4V @ 17µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 22.4 nC @ 10 V |
| FETFeature | 46W (Tc) |
| DraintoSourceVoltage(Vdss) | 40 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | PG-TO252-3-313 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 50A (Tc) |
| Vgs(Max) | 1780 pF @ 6 V |
| MinRdsOn) | 7.9mOhm @ 50A, 10V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Infineon
Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
