Max Operating Temperature | 175 °C |
---|---|
Power Dissipation | 65 W |
Min Operating Temperature | -55 °C |
Continuous Drain Current (ID) | 50 A |
Drain to Source Breakdown Voltage | 55 V |
Element Configuration | Single |
Rise Time | 51 ns |
Gate to Source Voltage (Vgs) | 16 V |
Turn-Off Delay Time | 53 ns |
Fall Time | 103 ns |
RoHS | Compliant |
Case/Package | TO-252 |
Infineon
Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3