RdsOn(Max)@Id | MOSFET (Metal Oxide) |
---|---|
Vgs(th)(Max)@Id | 10V |
Vgs | 30 V |
FETFeature | 68 nC @ 10 V |
DraintoSourceVoltage(Vdss) | 136W (Tc) |
OperatingTemperature | 2000 pF @ 25 V |
DriveVoltage(MaxRdsOn | PG-TO252-3-11 |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | 4V @ 85µA |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | -55°C ~ 175°C (TJ) |
FETType | N-Channel |
Technology | 50A (Tc) |
Current-ContinuousDrain(Id)@25°C | Surface Mount |
Vgs(Max) | 7.3mOhm @ 50A, 10V |
MinRdsOn) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | ±20V |
Infineon
Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3