Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 55 V |
Gate to Source Voltage (Vgs) | 16 V |
Mount | Surface Mount |
Fall Time | 115 ns |
RoHS | Compliant |
Max Operating Temperature | 175 °C |
Power Dissipation | 136 W |
Continuous Drain Current (ID) | 50 A |
Element Configuration | Single |
Rise Time | 57 ns |
Turn-Off Delay Time | 75 ns |
Number of Elements | 1 |
Case/Package | TO-252 |
Infineon
Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3