Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 100 V |
Gate to Source Voltage (Vgs) | 10 V |
Mount | Through Hole |
Current Rating | 22 A |
Fall Time | 100 ns |
Turn-On Delay Time | 25 ns |
RoHS | Compliant |
Number of Outputs | 1 |
Resistance | 85 mΩ |
Max Operating Temperature | 150 °C |
Power Dissipation | 95 W |
Drain to Source Resistance | 100 mΩ |
Continuous Drain Current (ID) | 22 A |
Element Configuration | Single |
Rise Time | 110 ns |
Length | 15.4 mm |
Turn-Off Delay Time | 210 ns |
Output Current per Channel | 22 A |
Number of Pins | 3 |
Voltage Rating (DC) | 100 V |
Lead Free | Lead Free |
Max Output Current | 68 A |
Case/Package | TO-220-3 |
Infineon
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Buffer/Inverter Based Peripheral Driver, 1 Driver, 10A, MOS, PSSO2, TO-220, SMD-3