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| RdsOn(Max)@Id | 560 pF @ 25 V |
|---|---|
| Vgs(th)(Max)@Id | 40W (Tc) |
| Vgs | - |
| FETFeature | TO-220AB |
| DraintoSourceVoltage(Vdss) | 60 V |
| OperatingTemperature | 4.5V |
| DriveVoltage(MaxRdsOn | 170mOhm @ 5.8A, 4.5V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | ±10V |
| InputCapacitance(Ciss)(Max)@Vds | Through Hole |
| Series | TEMPFET® |
| Qualification | |
| SupplierDevicePackage | - |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 11.5A (Tc) |
| Vgs(Max) | -55°C ~ 150°C (TJ) |
| MinRdsOn) | 2.5V @ 1mA |
| Package | Tube |
| PowerDissipation(Max) | TO-220-3 |
Infineon
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Buffer/Inverter Based Peripheral Driver, 1 Driver, 10A, MOS, PSSO2, TO-220, SMD-3
