RdsOn(Max)@Id | 560 pF @ 25 V |
---|---|
Vgs(th)(Max)@Id | 40W (Tc) |
Vgs | - |
FETFeature | TO-220AB |
DraintoSourceVoltage(Vdss) | 60 V |
OperatingTemperature | 4.5V |
DriveVoltage(MaxRdsOn | 170mOhm @ 5.8A, 4.5V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | ±10V |
InputCapacitance(Ciss)(Max)@Vds | Through Hole |
Series | TEMPFET® |
Qualification | |
SupplierDevicePackage | - |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 11.5A (Tc) |
Vgs(Max) | -55°C ~ 150°C (TJ) |
MinRdsOn) | 2.5V @ 1mA |
Package | Tube |
PowerDissipation(Max) | TO-220-3 |
Infineon
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Buffer/Inverter Based Peripheral Driver, 1 Driver, 10A, MOS, PSSO2, TO-220, SMD-3