RdsOn(Max)@Id | 3.5V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | - |
FETFeature | 50W |
DraintoSourceVoltage(Vdss) | 50 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | PG-TO220-3-5 |
GateCharge(Qg)(Max)@Vgs | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TEMPFET® |
Qualification | |
SupplierDevicePackage | Surface Mount |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
Vgs(Max) | 600 pF @ 25 V |
MinRdsOn) | 100mOhm @ 9A, 10V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Buffer/Inverter Based Peripheral Driver, 1 Driver, 10A, MOS, PSSO2, TO-220, SMD-3