Shape | Rectangular |
---|---|
S/NRatio | 300 Ohms |
ProductStatus | Obsolete |
Current-Supply | 190 µA |
Termination | Solder Pads |
Size/Dimension | 0.148 L x 0.118 W (3.76mm x 3.00mm) |
FrequencyRange | -38dB ±3dB @ 94dB SPL |
VoltageRange | 1.5 V ~ 3.6 V |
Direction | Omnidirectional |
Height(Max) | 0.047 (1.20mm) |
Ratings | - |
Voltage-Rated | 100 Hz ~ 10 kHz |
Series | SiSonic™ |
Type | MEMS (Silicon) |
Sensitivity | 63dB |
Package | Tape & Reel (TR) |
PortLocation | Bottom |
Impedance | - |
OutputType | Analog |
Infineon
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3
Infineon
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
Rochester Electronics
Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-251 Tube, PG-TO251-3, RoHS