RdsOn(Max)@Id | 5.5V @ 80µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 9.5 nC @ 10 V |
FETFeature | 25W (Tc) |
DraintoSourceVoltage(Vdss) | 600 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | PG-TO251-3-21 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolMOS™ |
Qualification | |
SupplierDevicePackage | TO-251-3 Short Leads, IPak, TO-251AA |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.8A (Tc) |
Vgs(Max) | 240 pF @ 25 V |
MinRdsOn) | 3Ohm @ 1.1A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3
Infineon
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
Rochester Electronics
Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-251 Tube, PG-TO251-3, RoHS