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| Min Operating Temperature | -55 °C |
|---|---|
| Dual Supply Voltage | 650 V |
| Fall Time | 12 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 600 V |
| Drain to Source Resistance | 1.4 Ω |
| Element Configuration | Single |
| Lifecycle Status | NRND (Last Updated: 2 years ago) |
| Number of Pins | 3 |
| Input Capacitance | 400 pF |
| Rds On Max | 1.4 Ω |
| Max Power Dissipation | 38 W |
| Drain to Source Breakdown Voltage | 600 V |
| On-State Resistance | 1.4 Ω |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | No SVHC |
| Termination | Through Hole |
| Turn-On Delay Time | 7 ns |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 38 W |
| Continuous Drain Current (ID) | 3.2 A |
| Rise Time | 3 ns |
| Turn-Off Delay Time | 64 ns |
| Package Quantity | 1500 |
| Case/Package | TO-251-3 |
Infineon
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3
Infineon
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
Rochester Electronics
Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-251 Tube, PG-TO251-3, RoHS
