RdsOn(Max)@Id | 2.2V @ 115µA |
---|---|
Vgs(th)(Max)@Id | ±16V |
Vgs | 273 nC @ 10 V |
FETFeature | 165W (Tc) |
DraintoSourceVoltage(Vdss) | 55 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 5V, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | PG-TO220-3-1 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
Vgs(Max) | 13060 pF @ 25 V |
MinRdsOn) | 4.8mOhm @ 69A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
INFINEON
Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN