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| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 40 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Fall Time | 22 ns |
| Turn-On Delay Time | 23 ns |
| RoHS | Compliant |
| Max Dual Supply Voltage | 40 V |
| Max Operating Temperature | 175 °C |
| Drain to Source Voltage (Vdss) | 40 V |
| Power Dissipation | 300 W |
| Drain to Source Resistance | 4 mΩ |
| Continuous Drain Current (ID) | 80 A |
| Element Configuration | Single |
| Rise Time | 63 ns |
| Length | 10 mm |
| Turn-Off Delay Time | 46 ns |
| Halogen Free | Halogen Free |
| Number of Pins | 3 |
| Height | 15.65 mm |
| Input Capacitance | 4.4 nF |
| Width | 4.4 mm |
| Rds On Max | 4 mΩ |
| Case/Package | TO-220-3 |
| Max Power Dissipation | 300 W |
INFINEON
Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
