Min Operating Temperature | -55 °C |
---|---|
Fall Time | 20 ns |
RoHS | Compliant |
Radiation Hardening | No |
Drain to Source Voltage (Vdss) | 55 V |
Drain to Source Resistance | 5.1 mΩ |
Element Configuration | Single |
Number of Pins | 3 |
Height | 15.65 mm |
Input Capacitance | 5.11 nF |
Width | 4.4 mm |
Rds On Max | 5.1 mΩ |
Max Power Dissipation | 300 W |
Drain to Source Breakdown Voltage | 55 V |
Gate to Source Voltage (Vgs) | 20 V |
Turn-On Delay Time | 18 ns |
Max Dual Supply Voltage | 55 V |
Max Operating Temperature | 175 °C |
Power Dissipation | 300 W |
Continuous Drain Current (ID) | 80 A |
Rise Time | 21 ns |
Length | 10 mm |
Turn-Off Delay Time | 54 ns |
Halogen Free | Halogen Free |
Contact Plating | Tin |
Case/Package | TO-220-3 |
INFINEON
Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN