RdsOn(Max)@Id | 4V @ 150µA |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | ±20V |
FETFeature | Through Hole |
DraintoSourceVoltage(Vdss) | 55 V |
OperatingTemperature | TO-220-3 |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 96 nC @ 10 V |
InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 175°C (TJ) |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | 2860 pF @ 25 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
Vgs(Max) | 215W (Tc) |
MinRdsOn) | 8mOhm @ 58A, 10V |
Package | Tube |
PowerDissipation(Max) | PG-TO220-3-1 |
INFINEON
Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN