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| RdsOn(Max)@Id | 10760 pF @ 25 V |
|---|---|
| Vgs(th)(Max)@Id | 165W (Tc) |
| Vgs | - |
| FETFeature | PG-TO220-3-1 |
| DraintoSourceVoltage(Vdss) | 55 V |
| OperatingTemperature | 10V |
| DriveVoltage(MaxRdsOn | 5.4mOhm @ 63A, 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | Through Hole |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | 240 nC @ 10 V |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| Vgs(Max) | -55°C ~ 175°C (TJ) |
| MinRdsOn) | 4V @ 110µA |
| Package | Tube |
| PowerDissipation(Max) | TO-220-3 |
INFINEON
Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
