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| Min Operating Temperature | -55 °C |
|---|---|
| Fall Time | 20 ns |
| RoHS | Compliant |
| Drain to Source Voltage (Vdss) | 55 V |
| Element Configuration | Single |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
| Number of Pins | 3 |
| Input Capacitance | 5.11 nF |
| Rds On Max | 4.8 mΩ |
| Max Power Dissipation | 300 W |
| Drain to Source Breakdown Voltage | 55 V |
| On-State Resistance | 4.8 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Turn-On Delay Time | 18 ns |
| Max Dual Supply Voltage | 55 V |
| Max Operating Temperature | 175 °C |
| Power Dissipation | 300 W |
| Continuous Drain Current (ID) | 80 A |
| Rise Time | 21 ns |
| Turn-Off Delay Time | 54 ns |
| Halogen Free | Halogen Free |
| Contact Plating | Tin |
| Packaging | Tape & Reel |
| Package Quantity | 1000 |
| Case/Package | TO-263-3 |
Infineon
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, TO-263, 3 PIN
