RdsOn(Max)@Id | 2.2V @ 35µA |
---|---|
Vgs(th)(Max)@Id | +20V, -16V |
Vgs | 60 nC @ 10 V |
FETFeature | 71W (Tc) |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | PG-TO263-3-2 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
Vgs(Max) | 4690 pF @ 25 V |
MinRdsOn) | 4mOhm @ 80A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Infineon
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, TO-263, 3 PIN