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| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 170 nC @ 10 V |
| FETFeature | 300W (Tc) |
| DraintoSourceVoltage(Vdss) | 40 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Discontinued at Digi-Key |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | PG-TO263-3-2 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| Vgs(Max) | 5300 pF @ 25 V |
| MinRdsOn) | 3.4mOhm @ 80A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Infineon
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, TO-263, 3 PIN
