Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 500 V |
Gate to Source Voltage (Vgs) | 20 V |
Current Rating | 4.5 A |
Fall Time | 10 ns |
Turn-On Delay Time | 10 ns |
RoHS | Compliant |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 560 V |
Power Dissipation | 31 W |
Drain to Source Resistance | 950 mΩ |
Continuous Drain Current (ID) | 4.5 A |
Element Configuration | Single |
Rise Time | 5 ns |
Turn-Off Delay Time | 70 ns |
Number of Pins | 3 |
Input Capacitance | 470 pF |
Voltage Rating (DC) | 560 V |
Lead Free | Lead Free |
Rds On Max | 950 mΩ |
Case/Package | TO-220-3 |
Max Power Dissipation | 31 W |
Infineon
Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3