RdsOn(Max)@Id | 3.9V @ 135µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 17 nC @ 10 V |
FETFeature | 29.7W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | PG-TO220-3-31 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolMOS™ |
Qualification | |
SupplierDevicePackage | TO-220-3 Full Pack |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 3.2A (Tc) |
Vgs(Max) | 400 pF @ 25 V |
MinRdsOn) | 1.4Ohm @ 2A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3