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IPP50R299CPHKSA1

IPP50R299CPHKSA1

Infineon Technologies

MOSFET N-CH 550V 12A TO220-3

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Products Specifications
RdsOn(Max)@Id3.5V @ 440µA
Vgs(th)(Max)@Id±20V
Vgs31 nC @ 10 V
FETFeature104W (Tc)
DraintoSourceVoltage(Vdss)550 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO220-3-1
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C12A (Tc)
Vgs(Max)1190 pF @ 100 V
MinRdsOn)299mOhm @ 6.6A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)
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