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IPP50CN10NGXKSA1

IPP50CN10NGXKSA1

Infineon Technologies

MOSFET N-CH 100V 20A TO220-3

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Products Specifications
RdsOn(Max)@Id1090 pF @ 50 V
Vgs(th)(Max)@Id44W (Tc)
Vgs-
FETFeaturePG-TO220-3
DraintoSourceVoltage(Vdss)100 V
OperatingTemperature10V
DriveVoltage(MaxRdsOn50mOhm @ 20A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType±20V
InputCapacitance(Ciss)(Max)@VdsThrough Hole
SeriesOptiMOS™
Qualification
SupplierDevicePackage16 nC @ 10 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C20A (Tc)
Vgs(Max)-55°C ~ 175°C (TJ)
MinRdsOn)4V @ 20µA
PackageTube
PowerDissipation(Max)TO-220-3
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