RdsOn(Max)@Id | 1V @ 250µA |
---|---|
Vgs(th)(Max)@Id | 1130 pF @ 10 V |
Vgs | ±8V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | 8-SOIC |
DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 2.5W (Ta) |
Series | - |
Qualification | |
SupplierDevicePackage | 28 nC @ 5 V |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 5A (Ta) |
Vgs(Max) | - |
MinRdsOn) | 47mOhm @ 5A, 4.5V |
Package | Bulk |
PowerDissipation(Max) | Surface Mount |
Fairchild Semiconductor
Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8