RdsOn(Max)@Id | 80mOhm @ 4.1A, 10V |
---|---|
Vgs(th)(Max)@Id | 6.6nC @ 4.5V |
Vgs | 3V @ 250µA |
Configuration | N and P-Channel |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 30V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-SOIC |
GateCharge(Qg)(Max)@Vgs | 282pF @ 10V |
Grade | |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 900mW |
Series | PowerTrench® |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 4.1A, 3.4A |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |
Fairchild Semiconductor
Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8