RdsOn(Max)@Id | - |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | - |
FETFeature | - |
DraintoSourceVoltage(Vdss) | - |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | - |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | * |
Qualification | |
SupplierDevicePackage | - |
FETType | - |
Technology | - |
Current-ContinuousDrain(Id)@25°C | - |
Vgs(Max) | - |
MinRdsOn) | - |
Package | Bulk |
PowerDissipation(Max) | - |
Infineon
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Infineon
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Infineon
Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN