RdsOn(Max)@Id | 1.1V @ 250µA |
---|---|
Vgs(th)(Max)@Id | 50 pF @ 15 V |
Vgs | 680 pC @ 4.5 V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 1.8V, 4.5V |
ProductStatus | Active |
Package/Case | SC-101, SOT-883 |
GateCharge(Qg)(Max)@Vgs | ±8V |
Grade | |
MountingType | Surface Mount |
InputCapacitance(Ciss)(Max)@Vds | 360mW (Ta), 2.7W (Tc) |
Series | - |
Qualification | |
SupplierDevicePackage | DFN1006B-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 530mA (Ta) |
Vgs(Max) | - |
MinRdsOn) | 1.4Ohm @ 350mA, 4.5V |
Package | Bulk |
PowerDissipation(Max) | - |