RdsOn(Max)@Id | 1.1V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±8V |
Vgs | 30 nC @ 8 V |
FETFeature | 900mW (Ta) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 1.5V, 4.5V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | U-DFN2020-6 (Type F) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | 6-UDFN Exposed Pad |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 9.5A (Ta) |
Vgs(Max) | 1710 pF @ 10 V |
MinRdsOn) | 15mOhm @ 7A, 4.5V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |