RdsOn(Max)@Id | 2.8V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±16V |
Vgs | 125 nC @ 10 V |
FETFeature | 204W (Tc) |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
MountingType | D2PAK |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchMOS™ |
Qualification | |
SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
Vgs(Max) | 8020 pF @ 25 V |
MinRdsOn) | 3.2mOhm @ 25A, 10V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
NXP USA Inc.
TRANSISTOR 90 A, 40 V, 0.0107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
NXP USA Inc.
50A, 30V, 0.0192ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3