RdsOn(Max)@Id | 4.5mOhm @ 25A, 10V |
---|---|
Vgs(th)(Max)@Id | 78 nC @ 10 V |
Vgs | 2.8V @ 1mA |
FETFeature | - |
DraintoSourceVoltage(Vdss) | MOSFET (Metal Oxide) |
OperatingTemperature | -55°C ~ 175°C (TJ) |
DriveVoltage(MaxRdsOn | 90A (Tc) |
ProductStatus | TrenchMOS™ |
Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
GateCharge(Qg)(Max)@Vgs | Automotive |
Grade | AEC-Q101 |
MountingType | Surface Mount |
InputCapacitance(Ciss)(Max)@Vds | 4707 pF @ 25 V |
Series | Bulk |
Qualification | |
SupplierDevicePackage | DPAK |
FETType | Active |
Technology | N-Channel |
Current-ContinuousDrain(Id)@25°C | 30 V |
Vgs(Max) | ±16V |
MinRdsOn) | 10V |
Package | 683 |
PowerDissipation(Max) | 158W (Tc) |
NXP USA Inc.
TRANSISTOR 90 A, 40 V, 0.0107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
NXP USA Inc.
50A, 30V, 0.0192ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3