RdsOn(Max)@Id | 1.4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | 41 pF @ 25 V |
Vgs | ±20V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 60 V |
OperatingTemperature | PG-SOT23 |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-236-3, SC-59, SOT-23-3 |
InputCapacitance(Ciss)(Max)@Vds | 360mW (Ta) |
Series | SIPMOS® |
Qualification | |
SupplierDevicePackage | 1.4 nC @ 10 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 230mA (Ta) |
Vgs(Max) | - |
MinRdsOn) | 3.5Ohm @ 230mA, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | Surface Mount |
INFINEON
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3