RdsOn(Max)@Id | ±20V |
---|---|
Vgs(th)(Max)@Id | 500mW (Ta) |
Vgs | - |
FETFeature | PG-SOT23-3-5 |
DraintoSourceVoltage(Vdss) | 190mA (Ta) |
OperatingTemperature | 100 V |
DriveVoltage(MaxRdsOn | 6Ohm @ 190mA, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 20.9 pF @ 25 V |
InputCapacitance(Ciss)(Max)@Vds | Surface Mount |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | 0.6 nC @ 10 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 4.5V, 10V |
Vgs(Max) | -55°C ~ 150°C (TJ) |
MinRdsOn) | 2.3V @ 13µA |
Package | Bulk |
PowerDissipation(Max) | TO-236-3, SC-59, SOT-23-3 |
INFINEON
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3